The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2025

Filed:

Jun. 29, 2023
Applicants:

Huazhong University of Science and Technology, Hubei, CN;

Peking University, Beijing, CN;

Inventors:

Chao Wang, Hubei, CN;

Yuansheng Zhao, Hubei, CN;

Jiarui Xu, Hubei, CN;

Zongwei Wang, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/4091 (2006.01); G11C 11/408 (2006.01); G11C 11/4096 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4091 (2013.01); G11C 11/4087 (2013.01); G11C 11/4096 (2013.01);
Abstract

A memristor-based in-memory logic circuit and in-memory logic computation system, and applications, pertaining to the technical field of integrated circuits, are provided. The in-memory logic circuit includes: a first memory cell and a second memory cell connected in parallel to each other, and a sense amplifier for generating a logic operation result. The two memory cells include memristors and MOSFET selectors connected in series. Resistance states of the two memristors are used to represent a first group of logic input signals, and voltage signals applied by gates of the two MOSFET selectors are used to represent a second group of logic input signals. Also provided are an in-memory logic computation system and applications.


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