The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2025

Filed:

Jul. 29, 2022
Applicants:

Beijing Boe Display Technology Co., Ltd., Beijing, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Ning Cong, Beijing, CN;

Longfei Fan, Beijing, CN;

Dachao Li, Beijing, CN;

Can Zhang, Beijing, CN;

Minghua Xuan, Beijing, CN;

Xiaochuan Chen, Beijing, CN;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G09G 3/3233 (2016.01); H10K 59/12 (2023.01); H10K 59/121 (2023.01); H10K 59/131 (2023.01);
U.S. Cl.
CPC ...
G09G 3/3233 (2013.01); H10K 59/1201 (2023.02); H10K 59/1213 (2023.02); H10K 59/1216 (2023.02); H10K 59/1315 (2023.02);
Abstract

A display substrate, a manufacturing method thereof and a display apparatus are provided. The display substrate includes multiple sub-pixels, a sub-pixel includes a first region (q1), a gap region (q3) and a second region (q2); the sub-pixel includes a first transistor (T1) including first active layer (1) and first gate electrode (11), a second transistor (T2) including second active layer (2) and second gate electrode (12) and a third transistor (T3) including third active layer (3) and third gate electrode (13); the first active layer is disposed in the first region, the second active layer and the third active layer are disposed in the second region, and via holes through which the first gate electrode and the third gate electrode are connected to a scan signal line and a via hole through which the second gate electrode is connected to the first transistor are provided in the gap region.


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