The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2025

Filed:

Jul. 08, 2022
Applicant:

Allegro Microsystems, Llc, Manchester, NH (US);

Inventors:

Andrey Timopheev, Vif, FR;

Clarisse Ducruet, Chambéry, FR;

Jeffrey Childress, San Jose, CA (US);

Assignee:

Allegro MicroSystems, LLC, Manchester, NH (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 33/00 (2006.01); G01R 33/09 (2006.01); H01F 10/32 (2006.01);
U.S. Cl.
CPC ...
G01R 33/0082 (2013.01); G01R 33/098 (2013.01); H01F 10/3254 (2013.01);
Abstract

A magnetoresistive element comprising a reference layer, a ferromagnetic sense layer having a free sense magnetization, and a tunnel barrier layer between the reference layer and the sense layer. The sense layer comprises a first sense layer portion in contact with the tunnel barrier layer and a second sense layer portion in contact with the first sense layer portion. The first sense layer portion is configured such that a magnetic coupling between the first and second sense layer portions is between ±10J/mand ±10J/m; and a perpendicular magnetic anisotropy (PMA) originating from the interface between the first sense layer portion and the tunnel barrier layer is between 8×10A/m and 8×10A/m, such as to shift positively the TCS of the magnetoresistive element and compensate the negative temperature coefficient of TMR of the magnetoresistive element.


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