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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12442067 B1

PDFFull Text
Date of Patent:
Oct. 14, 2025

Filed:

Feb. 24, 2017

Ceramic metallic coatings

Applicant:

Valeo North America, Inc., Troy, MI (US);

Inventors:

Shivi Singh, Seymour, IN (US);

Thomas Nolan, Seymour, IN (US);

Rosangela Loiudice, Seymour, IN (US);

Assignee:

Valeo North America, Troy, MI (US);

Attorney:

Valeo North America

Primary Examiner:

Callie E Shosho

Int. Cl.
CPC ...
C23C 14/00 (2006.01); C23C 14/06 (2006.01); C23C 14/20 (2006.01); C23C 14/35 (2006.01); C23C 14/50 (2006.01); C23C 14/54 (2006.01); F21S 43/50 (2018.01); F21S 45/10 (2018.01); H01J 37/32 (2006.01); H01J 37/34 (2006.01); B60R 13/02 (2006.01); F21S 41/37 (2018.01); F21S 41/50 (2018.01); F21S 43/33 (2018.01);
U.S. Cl.
CPC ...
C23C 14/0015 (2013.01); C23C 14/0057 (2013.01); C23C 14/0063 (2013.01); C23C 14/0641 (2013.01); C23C 14/205 (2013.01); C23C 14/352 (2013.01); C23C 14/505 (2013.01); C23C 14/548 (2013.01); F21S 43/50 (2018.01); F21S 45/10 (2018.01); H01J 37/32449 (2013.01); H01J 37/3405 (2013.01); H01J 37/3429 (2013.01); H01J 37/3476 (2013.01); B60R 13/02 (2013.01); F21S 41/37 (2018.01); F21S 41/50 (2018.01); F21S 43/33 (2018.01); H01J 2237/332 (2013.01);
Abstract

A magnetron sputtering apparatus includes a first independent sputtering target power supply, a second independent sputtering target power supply, a process gas port, a reactive gas port, a vacuum chamber configured to house the first independent sputtering target power supply, the second independent sputtering target power supply, the process gas port, the reactive gas port, and a platform for placing a part for deposition of a coating by the magnetron sputtering apparatus, and processing circuitry. The processing circuitry is configured to alternately sputter a first target and a second target by alternately switching between the first independent sputtering target power supply and the second independent sputtering target power supply, respectively, and control one or more process parameters to yield a predetermined color of the coating deposited onto the part.

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