The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2025
Filed:
Feb. 05, 2024
Applicant:
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Inventors:
Toshio Shiobara, Annaka, JP;
Hajime Itokawa, Annaka, JP;
Assignee:
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09C 1/30 (2006.01); C01B 33/18 (2006.01); C08K 3/36 (2006.01);
U.S. Cl.
CPC ...
C09C 1/3045 (2013.01); C01B 33/18 (2013.01); C08K 3/36 (2013.01); C01P 2004/03 (2013.01); C01P 2004/61 (2013.01); C01P 2004/62 (2013.01); C01P 2006/40 (2013.01); C01P 2006/80 (2013.01);
Abstract
A method for manufacturing a low dielectric silica powder incudes heat-treating a silica powder at a temperature of 500° C. to 1500° C. to achieve 0.0005 or less of a dielectric loss tangent of the silica powder at 10 GHz, and etching a surface of the heat-treated silica powder with an etching solution. A silica powder with an extremely small dielectric loss tangent, a resin composition containing the same, and a method for manufacturing a silica powder with a low dielectric loss tangent and strong adhesion at the interface to resin are achieved.