The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2025

Filed:

Feb. 08, 2021
Applicant:

Lawrence Livermore National Security, Llc, Livermore, CA (US);

Inventors:

Eric Meshot, Livermore, CA (US);

Steven Buchsbaum, Livermore, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 10/46 (2023.01); G01N 27/414 (2006.01); H10K 85/20 (2023.01);
U.S. Cl.
CPC ...
H10K 10/484 (2023.02); G01N 27/4146 (2013.01); H10K 10/481 (2023.02); H10K 85/221 (2023.02);
Abstract

Provided is a gated nanostructure device, which includes a thick film comprising a conducting nanoporous material between a source electrode and a drain electrode; and a gate electrode that modulates an electric current through the conducting nanoporous material between the source electrode and the drain electrode throughout a thickness of the thick film. The conducting nanoporous material includes an exposed portion, which is exposed to an external environment, and pores of the conducting nanoporous material are aligned at least partially between the source electrode and the drain electrode.


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