The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2025

Filed:

Jun. 17, 2022
Applicants:

Wisconsin Alumni Research Foundation, Madison, WI (US);

Newsouth Innovations Pty Limited, Sydney, AU;

Inventors:

Mark G. Friesen, Middleton, WI (US);

Merritt Losert, Madison, WI (US);

Susan Nan Coppersmith, Redfern, AU;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 77/14 (2025.01); H10F 77/122 (2025.01);
U.S. Cl.
CPC ...
H10F 77/1433 (2025.01); H10F 77/122 (2025.01);
Abstract

Gate-controlled quantum dots based on silicon-germanium (SiGe) alloy heterostructures are provided. Also provided are quantum computing systems incorporating the gate-controlled quantum dots. The quantum dots are formed in a semiconductor heterostructure in which a SiGe alloy quantum well is sandwiched between SiGe alloy barriers or between Ge barriers. The presence of germanium in the quantum dots increases the average valley splitting for quantum dots confined in the SiGe. As a result, the yield of quantum dots having a sufficiently high valley splitting for device applications is increased by the use of a SiGe alloy in the quantum well.


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