The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2025

Filed:

May. 27, 2021
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Yuji Isogai, Kanagawa, JP;

Yusuke Otake, Kanagawa, JP;

Ryota Watanabe, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/18 (2025.01); G01S 7/481 (2006.01); H10F 39/00 (2025.01);
U.S. Cl.
CPC ...
H10F 39/80373 (2025.01); G01S 7/4816 (2013.01); H10F 39/014 (2025.01); H10F 39/18 (2025.01); H10F 39/802 (2025.01);
Abstract

The present technology relates to a light receiving device, a method for manufacturing the same, and a distance measuring device capable of improving distance measurement accuracy by maintaining the balance of transfer capability between transfer transistors. A light receiving device includes a pixel including: an embedded photodiode having a charge storage layer of a second conductivity type different from a first conductivity type of a photoelectric conversion region in a region in the vicinity of a second surface on the opposite side to a first surface that is a light incident surface of a substrate; at least two transfer transistors that transfer a charge stored in the photodiode; and at least one discharge transistor that discharges a charge stored in the photodiode; in the light receiving device, the charge storage layer of the second conductivity type is placed to be, in a planar view, surrounded by gates and sidewalls of the transfer transistors, or gates and sidewalls of the transfer transistors and the discharge transistors. The present technology can be applied to, for example, a distance measuring module that measures the distance to a subject, or the like.


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