The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2025

Filed:

Sep. 14, 2020
Applicant:

Lfoundry S.r.l., Avezzano, IT;

Inventors:

Paolo Organtini, Avezzano, IT;

Giovanni Margutti, Avezzano, IT;

Assignee:

LFOUNDRY S.R.L., Avezzano, IT;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10F 39/12 (2025.01); H10F 39/00 (2025.01);
U.S. Cl.
CPC ...
H10F 39/199 (2025.01); H10F 39/014 (2025.01); H10F 39/807 (2025.01);
Abstract

The present invention relates to a method of manufacturing a backside illumination (BSI) CMOS optical sensor and more specifically to a method of reducing the cross talk and enhance the photon detection efficiency (PDE) in a backside illumination (BSI) CMOS optical sensor. In particular the claimed method comprises the step of creating an isolation structure between the adjacent sensing elements of the pixel-array of said BSI CMOS optical sensor, so as to isolate all the adjacent sensing elements from each other, and the step of creating a common voltage backside applying structure to all the sensing elements of said pixel-array, so as to connect all the sensing elements to a common voltage bias.


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