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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12439687 B1

PDFFull Text
Date of Patent:
Oct. 07, 2025

Filed:

Mar. 06, 2019

Organic light emitting display device and method of manufacturing organic light emitting display device

Applicant:

Samsung Display Co., Ltd., Yongin-Si, KR;

Inventors:

Myounghwa Kim, Seoul, KR;

Jaybum Kim, Seoul, KR;

Kyoung-Seok Son, Seoul, KR;

Seungjun Lee, Suwon-si Gyeonggi-do, KR;

Seunghun Lee, Seoul, KR;

Jun-Hyung Lim, Seoul, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:

Innovation Counsel LLP

Primary Examiner:

Steven B Gauthier

Assistant Examiner:

E Rhett Cheek

Int. Cl.
CPC ...
H10D 86/40 (2025.01); H10D 86/00 (2025.01); H10K 59/12 (2023.01); H10K 59/121 (2023.01); H10K 77/10 (2023.01); H10K 102/00 (2023.01); H10D 86/60 (2025.01);
U.S. Cl.
CPC ...
H10D 86/471 (2025.01); H10K 59/1213 (2023.02); H10D 86/60 (2025.01); H10K 59/1201 (2023.02); H10K 77/111 (2023.02); H10K 2102/311 (2023.02);
Abstract

An organic light emitting display device includes a substrate including a first region and a second region, a first transistor, the first transistor including a first active layer having a source region and a drain region disposed in the first region on the substrate, a first gate electrode disposed on the first active layer, a first source electrode disposed on the first gate electrode, the first source electrode being connected to the source region, a sacrificial layer structure disposed to be spaced apart from the first source electrode, the sacrificial layer structure having an opening, a protective insulating layer disposed on the first source electrode and the sacrificial layer structure, and a first drain electrode disposed on the protective insulating layer, and a sub-pixel structure disposed on the first transistor.

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