The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Feb. 16, 2023
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventor:
Hiroya Shimoyama, Tokyo, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/00 (2025.01); H10D 64/27 (2025.01); H10D 84/80 (2025.01); H10D 89/00 (2025.01); H10D 89/60 (2025.01);
U.S. Cl.
CPC ...
H10D 84/811 (2025.01); H10D 64/513 (2025.01); H10D 89/611 (2025.01);
Abstract
A sense MOSFET is formed at a position surrounded by a main MOSFET and a source pad connected to a source region of the main MOSFET in plan view. A source potential is supplied to a source region of the sense MOSFET via a wiring surrounded by the source pad in plan view, a field plate electrode formed in a trench together with a gate electrode, and wirings formed outside the source pad.
Shimoyama, Hiroya. (2025). Semiconductor device (U.S. Patent No. 12439683). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12439683
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile