The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2025

Filed:

Dec. 19, 2022
Applicant:

Denso Corporation, Kariya, JP;

Inventors:

Kazuo Akamatsu, Kariya, JP;

Tsuyoshi Fujiwara, Kariya, JP;

Assignee:

DENSO CORPORATION, Kariya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/01 (2025.01); H10D 30/01 (2025.01); H10D 30/66 (2025.01); H10D 62/83 (2025.01); H10D 64/23 (2025.01); H10D 64/62 (2025.01);
U.S. Cl.
CPC ...
H10D 64/252 (2025.01); H10D 30/0297 (2025.01); H10D 30/668 (2025.01); H10D 62/83 (2025.01); H10D 64/01 (2025.01); H10D 64/62 (2025.01);
Abstract

A semiconductor device includes a semiconductor substrate and an electrode. The electrode is electrically connected to the semiconductor substrate and located on the semiconductor substrate. The electrode has a lower metal layer, an upper metal layer and an intermediate layer. The lower metal layer is located at a side closer to the semiconductor substrate. The upper metal layer is located above the lower metal layer. The intermediate layer is located between the lower metal layer and the upper metal layer. Each of the lower metal layer and the upper metal layer is made of aluminum or an aluminum alloy. In the aluminum alloy, an element is added to aluminum. The intermediate layer is made of material that is more difficult to react with a hydroxyl group than the lower metal layer and the upper metal layer.


Find Patent Forward Citations

Loading…