The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Oct. 14, 2022
Hangzhou Fullsemi Semiconductor Co., Ltd., Hangzhou, CN;
Qi Yu, Hangzhou, CN;
HANGZHOU FULLSEMI SEMICONDUCTOR CO., LTD., Hangzhou, CN;
Abstract
A method of manufacturing a MOS device includes: providing a substrate having a source region and a drain region; forming a sandwich structure on the substrate, which includes a first SiOlayer, a high-k dielectric layer, and a second SiOlayer stacked sequentially from bottom up; forming a groove in the sandwich structure between the source region and the drain region, the depth of the groove extends from a top surface of the second SiOlayer to inside the sandwich structure, wherein the depths at two sides of the groove are shallower than the depth at the center of the groove; forming a gate conductive layer, which fills the groove, wherein a top surface of the gate conductive layer is higher than that of the second SiOlayer; and forming a sidewall structure on sidewalls of the gate conductive layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile