The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2025

Filed:

Mar. 17, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Teawon Kim, Hwaseong-si, KR;

Hyung Joon Kim, Yongin-si, KR;

Yong-Suk Tak, Seoul, KR;

Yurim Kim, Suwon-si, KR;

Kongsoo Lee, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6755 (2025.01); H10D 30/673 (2025.01); H10D 86/423 (2025.01); H10D 86/60 (2025.01);
Abstract

Disclosed is a semiconductor device comprising an oxide semiconductor layer on a substrate and including a first part and a pair of second parts that are spaced apart from each other across the first part, a gate electrode on the first part of the oxide semiconductor layer, and a pair of electrodes on corresponding second parts of the oxide semiconductor layer. A first thickness of the first part of the oxide semiconductor layer is less than a second thickness of each second part of the oxide semiconductor layer. A number of oxygen vacancies in the first part of the oxide semiconductor layer is less than a number of oxygen vacancies in each second part of the oxide semiconductor layer.


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