The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Jun. 23, 2022
Infineon Technologies Austria Ag, Villach, AT;
Stefan Tegen, Dresden, DE;
Alessandro Ferrara, Landskron, AT;
Franz Hirler, Isen, DE;
Andrei Josiek, Dresden, DE;
Matthias Kroenke, Dresden, DE;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A transistor device includes a semiconductor substrate having a first major surface, a cell field, and an edge termination region laterally surrounding the cell field. The cell field includes elongate trenches that extend from the first major surface into the semiconductor substrate and that are positioned substantially parallel to one another such that one or more inner elongate trenches are arranged between two outermost elongate trenches and elongate mesas, each elongate mesa being formed between neighbouring elongate trenches. The elongate mesas include a drift region, a body region on the drift region and a source region on the body region. In a top view, one or both of the outermost elongate trenches has a different contour from the one or more inner elongate trenches.