The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Jul. 01, 2022
Nanya Technology Corporation, New Taipei, TW;
Hsih-Yang Chiu, Taoyuan, TW;
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Abstract
The present application provides a method of manufacturing a memory device. The method includes steps of providing a semiconductor substrate; disposing a first insulating layer over the semiconductor substrate; disposing a first bottom electrode over the first insulating layer; disposing a first dielectric layer over the first bottom electrode; removing a portion of the first dielectric layer to form a first recess extending through the first dielectric layer; disposing a first capacitor dielectric conformal to the first recess and over the first bottom electrode; and forming a first top electrode within the first recess and surrounded by the first capacitor dielectric, wherein the first capacitor dielectric and the first top electrode extend laterally over the first bottom electrode and the semiconductor substrate.