The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12439612 B1

Date of Patent:

Oct. 07, 2025

Filed:

Apr. 02, 2024

Semiconductor device and manufacturing method of the semiconductor device

Applicant:

SK Hynix Inc., Icheon, KR;

Inventors:

Hyung Keun Kim, Icheon, KR;

Jun Ku Ahn, Icheon, KR;

Jun Young Lim, Icheon, KR;

Sung Lae Cho, Icheon, KR;

Assignee:

SK hynix Inc., Icheon, KR;

Attorney:

Primary Examiner:

Shih Tsun A Chou

Int. Cl.

CPC ...

H10B 63/00 (2023.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 70/00 (2023.01);

U.S. Cl.

CPC ...

H10B 63/845 (2023.02); H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 70/023 (2023.02); H10N 70/823 (2023.02); H10B 61/10 (2023.02); H10B 63/24 (2023.02);

Abstract

A semiconductor device includes a stack structure including first electrodes and insulating layers alternately stacked on each other, a second electrode passing through the stack structure, and variable resistance patterns each interposed between the second electrode and a corresponding one of the first electrodes. Each of the first electrodes includes a first sidewall facing the second electrode, and each of the insulating layers includes a second sidewall facing the second electrode. At least a part of each of the variable resistance patterns protrudes farther towards the second electrode than the second sidewall.

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