The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Jan. 16, 2024
Applicant:
Zeno Semiconductor, Inc., Sunnyvale, CA (US);
Inventors:
Jin-Woo Han, San Jose, CA (US);
Yuniarto Widjaja, Cupertino, CA (US);
Assignee:
Zeno Semiconductor, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); H10B 41/00 (2023.01); H10B 61/00 (2023.01);
U.S. Cl.
CPC ...
H10B 63/34 (2023.02); H10B 41/00 (2023.02); H10B 61/22 (2023.02); H10B 63/32 (2023.02); H10B 63/84 (2023.02);
Abstract
A semiconductor metal-oxide-semiconductor field effect transistor (MOSFET) with increased on-state current obtained through a parasitic bipolar junction transistor (BJT) of the MOSFET. Methods of operating the MOSFET as a memory cell or a memory array select transistor are provided.