The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Apr. 20, 2023
Renesas Electronics Corporation, Tokyo, JP;
Kazuhiko Segi, Tokyo, JP;
Yoshiyuki Kawashima, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
In a memory region, a memory-region first portion in which no raised epitaxial layer is formed, a memory-region second portion in which a first raised epitaxial layer is formed, and a memory-region third portion in which a second raised epitaxial layer is formed are defined. In the memory-region first portion, a first-diffusion-layer first portion of a memory transistor and a second-diffusion-layer first portion of a select transistor are formed. A first-diffusion-layer second portion of the memory transistor is formed in the first raised epitaxial layer. A second-diffusion-layer second portion of the select transistor is formed in the second raised epitaxial layer.