Semiconductor memory device and manufacturing method of the semiconductor memory device

Abstract

There are provided a semiconductor memory device and a manufacturing method of the semiconductor memory device. The semiconductor device includes: a first stack structure including interlayer insulating layers and first conductive patterns, which are alternately stacked; a second stack structure including a second conductive pattern overlapping with the first stack structure, and a third conductive pattern overlapping with the first stack structure with the second conductive pattern interposed between the first stack structure and the third conductive pattern, the third conductive pattern having an oxidation rate different from that of the second conductive pattern; channel structures penetrating the first stack structure and the second stack structure; and a bit line overlapping with the first stack structure with the second stack structure interposed between the first stack structure and the bit line.