The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Jun. 21, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Younghwan Son, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes a gate electrode structure, a channel, a division pattern, an insulation pattern structure, a through via, and a support structure. The gate electrode structure is on a substrate, and includes gate electrodes stacked in a first direction perpendicular to the substrate. Each of the gate electrodes extends in a second direction parallel to the substrate. The channel extends through the gate electrode structure. The division pattern is at each of opposite sides of the gate electrode structure in a third direction parallel to the substrate. The insulation pattern structure extends through the gate electrode structure. The through via extends through the insulation pattern structure. The support structure extends through the gate electrode structure between the insulation pattern structure and the division pattern. The support structure includes first and second extension portion extending in the second and third directions, respectively.