The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Jan. 04, 2024
Ipcell Corporation Limited, Hong Kong, HK;
Te-Hsun Hsu, Hsinchu County, TW;
Ipcell Corporation Limited, Hong Kong, HK;
Abstract
A memory device comprises a memory cell comprising first to third transistors and a fuse element. A control terminal and a first terminal of the first transistor are coupled to a write word line and a source line respectively. The second transistor has a control terminal coupled to a second terminal of the first transistor and a first terminal coupled to a bit line. A first terminal of the fuse element is coupled to the second terminal of the first transistor and the control terminal of the second transistor. A control terminal of the third transistor is coupled to a read word line. First and second terminals of the third transistor are coupled to the source line and a second terminal of the second transistor. The first transistor is turned on to form a write path and the second and third transistors form a read path.