The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Jun. 17, 2022
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventor:
Jae Hyun Han, Icheon-si, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H10D 30/63 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10B 12/31 (2023.02); H10B 12/33 (2023.02); H10D 30/63 (2025.01); H10D 64/512 (2025.01);
Abstract
A method of manufacturing a semiconductor device comprises: forming a first array including a first bit line extending in a first direction, a first word line extending in a second direction intersecting the first direction, and a first transistor being located at a first intersection of the first word line and the first bit line, the first transistor being connected to the first word line and the first bit line; forming a first capacitor electrically connected to the first transistor, the first capacitor being located at a first part of the first intersection; and forming a second capacitor located at a second part of the first intersection.