The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Mar. 27, 2023
Avago Technologies International Sales Pte. Limited, Singapore, SG;
Junjie Lu, Irvine, CA (US);
Jing Guo, Irvine, CA (US);
Naga Radha Krishna Damaraju, Irvine, CA (US);
Xicheng Jiang, Irvine, CA (US);
Avago Technologies International Sales Pte. Limited, Singapore, SG;
Abstract
A device includes a first circuit, a ground, a reference voltage source that provides a reference voltage, and a first transistor that includes a first drain, a first source, and a first gate. The first circuit is coupled between the first source and the ground. The device has a second transistor that includes a second source and a second gate. The second transistor is biased as a source follower with the second source of the second transistor being set at the reference voltage. The first gate of the first transistor is coupled to the second gate of the second transistor, the first source has equal voltage as the second source, and the first circuit is coupled between the first source having the reference voltage and the ground to draw a constant current from the first source and to bias the first transistor in the saturation region to reduce parasitic capacitance.