The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Jul. 20, 2023
Galaxycore Shanghai Limited Corporation, Shanghai, CN;
Lixin Zhao, Shanghai, CN;
Jingwei Wei, Shanghai, CN;
Yuhao Wen, Shanghai, CN;
Huaizhao Li, Shanghai, CN;
GALAXYCORE SHANGHAI LIMITED CORPORATION, Shanghai, CN;
Abstract
A control method of a high gain image sensor is provided. A column bias current source and a column PMOS amplifier transistor are provided in a column signal readout unit, the column bias current source is connected to a column-common current output connecting line, a drain of the column PMOS amplifier transistor is connected to a column-common current input connecting line, and a gate of the column PMOS amplifier transistor is connected to the column-common current output connecting line, to acquire an amplified signal of a floating diffusion region of a readout row pixel unit on the column-common current input connecting line. An SHCG is achieved, and a dynamic range in a dark light scene is expanded. A device structure size in the column signal readout unit can be much larger than the transistor in the pixel, which results in better process consistency and more flexible adjustment of the conversion gain.