The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2025

Filed:

Nov. 17, 2023
Applicant:

Navitas Semiconductor Limited, Dublin, IE;

Inventors:

Hongwei Jia, Aliso Viejo, CA (US);

Santosh Sharma, Austin, TX (US);

Daniel M. Kinzer, El Segundo, CA (US);

Victor Sinow, Fresno, CA (US);

Matthew Anthony Topp, Colorado Springs, CO (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/012 (2006.01);
U.S. Cl.
CPC ...
H03K 3/012 (2013.01);
Abstract

Circuits and methods that control a rate of change of a drain voltage as a function of time in a transistor are disclosed. In one aspect, the circuit includes a transistor having a gate terminal that controls operation of the transistor, and a control circuit coupled to the gate terminal and arranged to change a voltage at the gate terminal at a first rate of voltage with respect to time from a first voltage to a first intermediate voltage, and further arranged to change the voltage at the gate terminal at a second rate of voltage with respect to time from the first intermediate voltage to a second intermediate voltage, where the first rate is different than the second rate.


Find Patent Forward Citations

Loading…