The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2025

Filed:

Jun. 13, 2022
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Katsuo Yamada, Yokkaichi, JP;

Kakeru Tamai, Yokkaichi, JP;

Akira Iwasaki, Yokkaichi, JP;

Akira Fukunaga, Yokkaichi, JP;

Koichi Matsuno, Fremont, CA (US);

Assignee:

Sandisk Technologies, Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01); H10B 51/20 (2023.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02); H10B 51/20 (2023.02);
Abstract

A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, memory opening fill structures located within a respective memory opening vertically extending through the alternating stack in a memory array region, and support pillar structures vertically extending through the alternating stack. Each of the memory opening fill structures includes a respective vertical semiconductor channel and a respective memory film that contacts each layer within the alternating stack. Each of the support pillar structures includes a respective dummy vertical semiconductor channel, a respective dummy memory film, and at least one respective dielectric spacer material portion laterally surrounding the respective dummy memory film and interposed between the electrically conductive layers and the respective dummy memory film.


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