Semiconductor device including a nonvolatile vertical memory device and electronic system including the semiconductor device

Abstract

A semiconductor device includes: a stepped connection portion having a plurality of conductive pad portions disposed on a substrate; an insulating block covering the plurality of conductive pad portions, wherein the insulating block has a first surface and a second surface, wherein the first surface faces the stepped connection portion, wherein the second surface is flat and extends in a direction parallel to a first surface of the substrate, wherein the insulating block includes a silicon oxide film doped with a dopant element including a metalloid element or a non-metal element, wherein the dopant element has an atomic weight within a range of 5 to 15; and at least one plug structure passing through the insulating block in a vertical direction with respect to the first surface of substrate.