The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Feb. 20, 2025
Destination 2d Inc., Milpitas, CA (US);
Kaustav Banerjee, Goleta, CA (US);
Brian Cronquist, Klamath Falls, OR (US);
Destination 2D Inc., San Jose, CA (US);
Abstract
A conducting thin film structure or pattern which facilitates the insertion of dopant atoms, ions, or molecules into layered 2D materials including: a layered 2D material, an electrically isolative material disposed below the layered 2D material, where the layered 2D material has at least one layer, where the layered 2D material includes slots, where the slots include etched regions where the layered 2D material is at least partially etched away, where the etched regions include a width greater than 0.5 nm and less than 1 meter, where the layered 2D material is intercalation doped with at least one dopant, where the at least one dopant includes at least one intercalation doping agent, where the layered 2D material with the slots is fully intercalation doped (stage-1 intercalation) or partially intercalation doped, where a first portion of the layered 2D material is doped p-type, and a second portion is doped n-type.