The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Nov. 02, 2022
Applicant:
L3harris Technologies, Inc., Melbourne, FL (US);
Inventors:
Assignee:
L3HARRIS TECHNOLOGIES, INC., Melbourne, FL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 1/34 (2006.01); H01J 9/12 (2006.01);
U.S. Cl.
CPC ...
H01J 1/34 (2013.01); H01J 9/12 (2013.01); H01J 2201/3423 (2013.01);
Abstract
A photocathode epitaxial structure. The photocathode epitaxial structure includes an improved substrate stack. The improved substrate stack includes a GaAs substrate and one or more additional layers formed on the GaAs substrate. The one or more additional layers are configured to provide an improved substrate stack surface with predetermined characteristics for forming a semiconductor device on the improved substrate stack surface. The photocathode epitaxial structure further includes an InGaAs p-type photocathode formed on the improved substrate stack surface. The InGaAs p-type photocathode has a predetermined percentage of In.