The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Mar. 19, 2024
Unisantis Electronics Singapore Pte. Ltd., Singapore, SG;
UNISANTIS ELECTRONICS SINGAPORE PTE. LTD., Singapore, SG;
Abstract
Provided is a semiconductor device including a memory cell and a MOS transistor. The memory cell includes a first gate insulating layer and a first gate conductor layer surrounding a first pillar-shaped p layer erected on a first p layer substrate, and a second gate insulating layer, a second gate conductor layer, and Nlayers surrounding a second pillar-shaped p layer connected to the first pillar-shaped p layer. The MOS transistor includes a third pillar-shaped p layer erected on a second p layer substrate connected to the first p layer substrate, and a third gate insulating layer, a third gate conductor layer, and Nlayers surrounding a fourth pillar-shaped p layer placed on and in contact with the third pillar-shaped p layer. In a vertical direction, the second pillar-shaped p layer has a length shorter than a length of the fourth pillar-shaped p layer.