The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Dec. 28, 2021
International Business Machines Corporation, Armonk, NY (US);
Masao Tokunari, Kanagawa, JP;
Ryan Daniel Schilling, New York, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
Techniques for creating an SiGe/Si electro-optomechanical quantum transducer, comprising an SiGe/Si optical ring resonator and capacitor, that can be associated with a qubit are presented. The optical resonator, comprising an SiGe optical waveguide and a strained silicon membrane, can be formed and disposed over a substrate. The strained silicon membrane can have a photoelastic coupling with the SiGe optical waveguide. A capacitor, comprising a superconducting material, can be formed in proximity to the optical resonator. The top plate of the capacitor can be associated with the strained silicon membrane. A recessed region can be formed in the back side of the substrate along a desired silicon plane, extending to form a hole in the top side of the substrate. A superconducting material can be applied along substrate surfaces defining the recessed region and hole. The superconducting material covering the hole can be the bottom plate of the capacitor.