The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2025

Filed:

Jun. 09, 2022
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Adrian Mikolajczak, Los Altos, CA (US);

Muzammil Arain, Milpitas, CA (US);

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01S 17/894 (2020.01); H04N 25/20 (2023.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
G01S 17/894 (2020.01); H04N 25/20 (2023.01); H10F 39/184 (2025.01);
Abstract

A time-of-flight (ToF) sensor includes a photodetector array and a processing circuit. The photodetector array includes a plurality of photodetectors wherein each photodetector of the photodetector array includes a silicon-based, light-sensitive diode. Each silicon-based, light-sensitive diode includes a photosensitive layer comprising a plurality of quantum dot particles sensitive to a near infrared (NIR) region of an electromagnetic spectrum, wherein the plurality of quantum dot particles converts optical energy into electrical energy to generate an electrical current in response to receiving NIR light having a wavelength in the NIR region. The processing circuit is configured to receive the electrical current and calculate a time-of-flight of the received NIR light based on the electrical current.


Find Patent Forward Citations

Loading…