The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2025

Filed:

Apr. 29, 2022
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventor:

Noah Elliot Baker, West Linn, OR (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01B 7/28 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
G01B 7/28 (2013.01); H01J 37/32715 (2013.01); H01L 21/67288 (2013.01); H01L 21/6833 (2013.01); H01J 2237/2007 (2013.01); H01J 2237/24578 (2013.01);
Abstract

Various embodiments herein relate to apparatuses and methods for wafer state detection. In some embodiments, an apparatus for wafer state detection is provided, the apparatus comprising: an RF blocking filter; a DC blocking filter; and a controller coupled to a plurality of electrodes associated with an electrostatic chuck (ESC) via the RF blocking filter and the DC blocking filter, wherein the controller is configured to: cause an input signal to be injected in an input side of a circuit associated with the plurality of electrodes, the RF blocking filter, and the DC blocking filter, wherein the input side corresponds to a first electrode; measure characteristics of an output signal at an output side of the circuit, wherein the output side corresponds to a second electrode; and calculate wafer state characteristics of a wafer positioned on a surface of a platen based on the characteristics of the output signal.


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