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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12435442 B1

PDFFull Text
Date of Patent:
Oct. 07, 2025

Filed:

Jun. 29, 2020

Strain engineering and epitaxial stabilization of halide perovskites

Applicant:

The Regents of the University of California, Oakland, CA (US);

Inventors:

Sheng Xu, La Jolla, CA (US);

Yimu Chen, La Jolla, CA (US);

Yusheng Lei, La Jolla, CA (US);

Assignee:

THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US);

Attorney:

Kaplan Breyer Schwarz LLP

Primary Examiner:

Matthew J Song

Int. Cl.
CPC ...
C30B 29/12 (2006.01); C30B 19/08 (2006.01); C30B 19/10 (2006.01); C30B 19/12 (2006.01); C30B 29/54 (2006.01); H10K 30/20 (2023.01); H10K 71/12 (2023.01); H10K 85/50 (2023.01); H01G 9/20 (2006.01); H10K 85/30 (2023.01);
U.S. Cl.
CPC ...
C30B 29/12 (2013.01); C30B 19/08 (2013.01); C30B 19/10 (2013.01); C30B 19/12 (2013.01); C30B 29/54 (2013.01); H10K 30/20 (2023.02); H10K 71/12 (2023.02); H10K 85/50 (2023.02); H01G 9/2009 (2013.01); H10K 85/30 (2023.02);
Abstract

In accordance with a method of forming a halide perovskite thin film, a first halide perovskite material is chosen from which a halide perovskite thin film is to be formed. An epitaxial substrate formed from a second halide perovskite material is also chosen. The halide perovskite thin film is epitaxially formed on the substrate from the first halide perovskite material. The substrate is chosen such that the halide perovskite thin film formed on the substrate has a selected value of at least one property. The property is selected from the group including crystal structure stability, charge carrier mobility and band gap.

Find Patent Forward Citations

Xu, Sheng. (2025). Strain engineering and epitaxial stabilization of halide perovskites (U.S. Patent No. 12435442). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12435442

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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