The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2025

Filed:

Feb. 02, 2023
Applicant:

Seiko Epson Corporation, Tokyo, JP;

Inventors:

Kazuya Kitada, Nagano, JP;

Koji Ohashi, Nagano, JP;

Yasuaki Hamada, Nagano, JP;

Yoshiki Yano, Nagano, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B41J 2/14 (2006.01); B41J 2/16 (2006.01); H10N 30/00 (2023.01); H10N 30/853 (2023.01);
U.S. Cl.
CPC ...
H10N 30/8561 (2023.02); B41J 2/14233 (2013.01); B41J 2/161 (2013.01); H10N 30/708 (2024.05);
Abstract

A piezoelectric element includes: a first electrode formed at a vibration plate; a seed layer formed at the first electrode; a piezoelectric film containing potassium, sodium, and niobium and formed at the seed layer; and a second electrode formed at the piezoelectric film. The piezoelectric film contains lithium and one or more first transition elements. The seed layer contains bismuth. When the piezoelectric film is divided into two equal parts in a stacking direction, the second electrode side is defined as a first region, and the first electrode side is defined as a second region, a bismuth intensity obtained by SIMS measurement at a boundary between the first region and the second region is equal to or less than 1/500 of a maximum bismuth intensity obtained by the SIMS measurement of the piezoelectric film.


Find Patent Forward Citations

Loading…