The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2025

Filed:

Dec. 15, 2022
Applicants:

Alliance for Sustainable Energy, Llc, Golden, CO (US);

Swift Solar, Inc., San Carlos, CA (US);

Inventors:

Axel Finn Palmstrom, Golden, CO (US);

Tomas Leijtens, Emerald Hills, CA (US);

Joseph Jonathan Berry, Boulder, CO (US);

David Todd Moore, Arvada, CO (US);

Giles Edward Eperon, Arvada, CO (US);

Assignees:

Alliance for Sustainable Energy, LLC, Golden, CO (US);

Swift Solar, Inc., San Carlos, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 85/10 (2023.01); H10K 30/15 (2023.01); H10K 30/30 (2023.01); H10K 85/20 (2023.01); H10K 50/15 (2023.01); H10K 50/16 (2023.01); H10K 102/00 (2023.01);
U.S. Cl.
CPC ...
H10K 85/151 (2023.02); H10K 30/15 (2023.02); H10K 30/30 (2023.02); H10K 85/1135 (2023.02); H10K 85/211 (2023.02); H10K 50/15 (2023.02); H10K 50/16 (2023.02); H10K 2102/00 (2023.02); H10K 2102/351 (2023.02);
Abstract

The present disclosure relates to a device that includes a first layer that includes at least one of a semiconducting material, a hole transport material (HTM), and/or an electron transport material (ETM), a second layer, and a third layer that includes a material that is at least one of transparent or conductive, where the second layer is positioned between the first layer and the third layer, the first layer, the second layer, and the third layer are in electrical contact with each other, and the third layer has a first thickness between greater than zero nm and about 100 nm. In some embodiments of the present disclosure, the semiconducting material may include a perovskite.


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