The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2025

Filed:

May. 02, 2022
Applicant:

Samsung Display Co., Ltd., Yongin-Si, KR;

Inventors:

Yeonhwa Lee, Hwaseong-si, KR;

Hye Jin Gwark, Suwon-si, KR;

Arong Kim, Hwaseong-si, KR;

Jaeik Kim, Seoul, KR;

Jungsun Park, Yongin-si, KR;

Heemin Park, Hwaseong-si, KR;

Joongu Lee, Seoul, KR;

Hyoung Sub Lee, Yongin-si, KR;

Kyu Hwan Hwang, Seongnam-si, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 59/122 (2023.01); H10K 50/844 (2023.01); H10K 59/123 (2023.01); H10K 59/124 (2023.01); H10K 102/10 (2023.01);
U.S. Cl.
CPC ...
H10K 59/122 (2023.02); H10K 50/844 (2023.02); H10K 59/123 (2023.02); H10K 59/124 (2023.02); H10K 2102/102 (2023.02); H10K 2102/103 (2023.02);
Abstract

Disclosed is a display device including a base layer, a circuit layer including a plurality of transistors spaced apart from each other and disposed on a top of the base layer, a plurality of insulating layers disposed on a top of the base layer, and a plurality of contact electrodes electrically connected to the transistors, respectively, a first light emitting unit disposed on a top of the circuit layer, a second light emitting unit, and a lower protrusion disposed between at least one of the transistors and the second lower electrode, wherein at least one of the contact electrodes is disposed to extend to a top surface of the lower protrusion in the circuit layer while following a shape of the lower protrusion to simplify an etching process of an encapsulation layer.


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