The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Dec. 06, 2022
Aeluma, Inc., Goleta, CA (US);
Bei Shi, Santa Barbara, CA (US);
Jonathan Klamkin, Santa Barbara, CA (US);
Simone Tommaso Suran Brunelli, Santa Barbara, CA (US);
Bowen Song, Santa Barbara, CA (US);
Aeluma, Inc., Goleta, CA (US);
Abstract
A method and device for a sensor using a graded wavelength configuring material. The wavelength configuring material can be configured for a selected wavelength using plurality of material regions of varying elemental concentrations in a continuous or step-wise pattern. The material compositions can include InP, InGaAs, GaAs, GaP, InGaAsP, InAs, InAlAs, InAlGaAs, InGaP, and the like. Further, the interface regions between adjacent material regions can be free from smearing of compositions. These material regions can also form a strained graded region overlying a buffer material and a silicon substrate. An array of photodetector materials can be formed overlying the wavelength configuring material. These materials can include an n-type material, an absorption material, a band transition material, and a p-type material, among others. The resulting device exhibits high performance at the selected wavelength and is characterized by low dislocation density.