The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2025

Filed:

Mar. 22, 2022
Applicant:

Csem Centre Suisse D'electronique ET DE Microtechnique Sa—recherche ET Développement, Neuchâtel, CH;

Inventors:

Andrea Ingenito, Neuchâtel, CH;

Sylvain Nicolay, Portalban, CH;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 77/30 (2025.01); H10F 71/00 (2025.01); H10F 77/20 (2025.01);
U.S. Cl.
CPC ...
H10F 77/311 (2025.01); H10F 71/129 (2025.01); H10F 77/211 (2025.01);
Abstract

Disclosed is a photovoltaic device including: —a silicon substrate; —a first tunnel layer situated upon at least a first side of the silicon substrate; —a first polycrystalline silicon-based capping layer situated upon the first tunnel layer; and —a second tunnel layer situated upon substantially the entirety of the first polycrystalline silicon-based capping layer. The photovoltaic device further includes: —a second polycrystalline silicon-based capping layer situated upon predetermined zones of the second tunnel layer, areas of the second tunnel layer situated outside of the predetermined zones being free of the second polycrystalline silicon-based capping layer; and —a metal contact situated upon at least part of the second polycrystalline silicon-based capping layer.


Find Patent Forward Citations

Loading…