The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2025

Filed:

Jul. 04, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Young Gu Jin, Osan-si, KR;

Jung Chak Ahn, Yongin-si, KR;

Won Seok Lee, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01);
U.S. Cl.
CPC ...
H10F 39/8037 (2025.01);
Abstract

Disclosed is a semiconductor device including a substrate, a gate structure on the substrate, and including first and second sides extended in parallel with a first direction and spaced apart from each other in a second direction, and a third side extended in parallel with the second direction, and a plurality of source/drain areas including first and second source/drain areas spaced apart from each other in the second direction and a third source/drain area spaced apart from at least one of the first or second source/drain area in the first direction, the first and second source/drain areas overlap the first and second sides, respectively, the third source/drain area overlaps one of the first side or the third side, and a voltage applied to the first and second source/drain areas and a voltage applied to the third source/drain area operate based on their respective values different from each other.


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