The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2025

Filed:

Nov. 11, 2021
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventor:

Jong Eun Kim, Icheon-si, KR;

Assignee:

SK HYNIX INC., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01);
U.S. Cl.
CPC ...
H10F 39/802 (2025.01); H10F 39/8033 (2025.01);
Abstract

An image sensing device includes a first photoelectric conversion region structured to generate photocharges based on incident light, a first photogate disposed over the first photoelectric conversion region to collect photocharges generated by the first photoelectric conversion region, a first transfer gate disposed at one side of the first photogate to transmit the photocharges collected by the first photogate to a first floating diffusion region, a first photogate contact coupled to a first region of the first photogate, and a second photogate contact coupled to a second region of the first photogate that is located closer to the first transfer gate than the first region in the first photogate. The second region is more deeply etched than the first region.


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