The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Jan. 17, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Juri Lee, Suwon-si, KR;
Taegon Kim, Suwon-si, KR;
Seungmo Kang, Suwon-si, KR;
Sihyung Lee, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
An integrated circuit (IC) device includes a fin-type active region extending long in a first lateral direction on a substrate, a channel region on the fin-type active region, a gate line surrounding the channel region, and a source/drain region adjacent to the gate line on the fin-type active region, the source/drain region. The source/drain region includes a lower source/drain region and an upper source/drain region. The lower source/drain region includes at least one silicon isotope selected from silicon isotopes ofSi,Si, andSi, and the upper source/drain region includes aSi element at a content higher than a content of theSi element in the lower source/drain region.