The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2025

Filed:

Jun. 25, 2021
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Lizhong Wang, Beijing, CN;

Guangcai Yuan, Beijing, CN;

Ce Ning, Beijing, CN;

Nianqi Yao, Beijing, CN;

Hehe Hu, Beijing, CN;

Liping Lei, Beijing, CN;

Dongfang Wang, Beijing, CN;

Dapeng Xue, Beijing, CN;

Shuilang Dong, Beijing, CN;

Zhengliang Li, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6755 (2025.01); H10D 30/6739 (2025.01); H10D 30/6757 (2025.01);
Abstract

At least one embodiment of the present disclosure provides an oxide thin film transistor, a display device, and a preparation method of the oxide thin film transistor, and the oxide thin film transistor includes a base substrate; an oxide semiconductor layer provided on the base substrate, and an insulating layer provided on a side of the oxide semiconductor layer away from the base substrate; in which the insulating layer is made of oxide; the insulating layer includes a first insulating layer and a second insulating layer which are stacked; a density of the second insulating layer is greater than a density of the first insulating layer; and the second insulating layer is farther away from the base substrate than the first insulating layer.


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