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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12432978 B1

PDFFull Text
Date of Patent:
Sep. 30, 2025

Filed:

Sep. 24, 2021

Thin-film transistor substrate having first and second insulating films

Applicant:

Wuhan Tianma Micro-electronics Co., Ltd., Wuhan, CN;

Inventor:

Jun Tanaka, Kanagawa, JP;

Assignee:

WUHAN TIANMA MICRO-ELECTRONICS CO., LTD., Wuhan, CN;

Attorney:

NIXON & VANDERHYE

Primary Examiner:

Eva Y Montalvo

Assistant Examiner:

Pratiksha Jayant Lohakare

Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/66 (2006.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10K 59/12 (2023.01); H10K 59/121 (2023.01);
U.S. Cl.
CPC ...
H10D 30/6745 (2025.01); H10D 30/0321 (2025.01); H10D 30/6755 (2025.01); H10K 59/1213 (2023.02); H10K 59/1216 (2023.02); H10K 59/1201 (2023.02);
Abstract

A first thin-film transistor includes a polysilicon film. A second thin-film transistor includes an oxide semiconductor film. A first insulating film is located upper than the polysilicon film and the oxide semiconductor film. The first insulating film is in contact with the oxide semiconductor film and covers at least a part of the polysilicon film and at least a part of the oxide semiconductor film. A second insulating film is located upper than the first insulating film and contains hydrogen at a concentration higher than the first insulating film. The first insulating film includes a first part and a second part. The first part includes a part covering the at least a part of the polysilicon film. The second part includes a part covering the at least a part of the oxide semiconductor film. The first part is thinner than the second part.

Find Patent Forward Citations

Tanaka, Jun. (2025). Thin-film transistor substrate having first and second insulating films (U.S. Patent No. 12432978). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12432978

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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