The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2025

Filed:

Dec. 06, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Beom Jin Park, Suwon-si, KR;

Myung Gil, Suwon-si, KR;

Dong Won, Suwon-si, KR;

Keun Hwi, Suwon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10D 30/43 (2025.01); H10D 62/10 (2025.01); H10D 64/23 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6735 (2025.01); H10D 30/43 (2025.01); H10D 62/121 (2025.01); H10D 64/258 (2025.01); H10D 84/83 (2025.01);
Abstract

A semiconductor device including a substrate, a first and second active pattern extending in a first horizontal direction on the substrate, the second active pattern apart from the first active pattern in the first horizontal direction, first nanosheets apart from each other in a vertical direction on the first active pattern, second nanosheets apart from each other in the vertical direction on the first and second active patterns, a gate electrode extending in a second horizontal direction different from the first horizontal direction on the first active pattern and surrounding the first nanosheets, a source/drain region between the first and second nanosheets, an active cut penetrating the second nanosheets in the vertical direction, extending to the substrate, and separating the first and second active patterns, and a sacrificial layer between the source/drain region and the active cut, in contact with the active cut, and including silicon germanium may be provided.


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Park, Beom. (2025). Semiconductor device (U.S. Patent No. 12432974). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12432974

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