The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Feb. 10, 2023
GE Aviation Systems Llc, Grand Rapids, MI (US);
Collin William Hitchcock, Clifton Park, NY (US);
Stacey J. Kennerly, Niskayuna, NY (US);
Ljubisa D. Stevanovic, Clifton Park, NY (US);
GE Aviation Systems LLC, Grand Rapids, MI (US);
Abstract
A semiconductor device cell includes a semiconductor layer having a surface defining a series of parallel striations extending in a first direction. The semiconductor layer surface has a lower electrical resistance in the first direction than in a second direction orthogonal to the first direction. A channel region defines a set of first channel region segments extending in the first direction, and a set of second channel region segments extending in the second direction. The first channel region segments and the second channel region segments are arranged to maximize portions of the channel region extending in the first direction across the surface, and minimize portions of the channel region extending in the second direction, to reduce or minimize the effective electrical resistance of the channel region in operation.