The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Jan. 29, 2022
Applicant:
Cansemi Technology Inc., Guangzhou, CN;
Inventors:
Yohtz Julian Chang, Guangzhou, CN;
Yunbo Chen, Guangzhou, CN;
Canyang Huang, Guangzhou, CN;
Zeyong Chen, Guangzhou, CN;
Assignee:
CANSEMI TECHNOLOGY INC., Guangzhou, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 1/00 (2025.01); H10D 1/66 (2025.01); H10D 89/10 (2025.01);
U.S. Cl.
CPC ...
H10D 1/047 (2025.01); H10D 1/66 (2025.01); H10D 89/10 (2025.01);
Abstract
A semiconductor device structure and a method of forming the structure are disclosed. The semiconductor device structure includes a first capacitor and a second capacitor. The first capacitor is formed in a first redundant area, and the second capacitor is formed in a second redundant area. Since the first and second capacitors are formed in the respective redundant areas of the substrate, they will not unnecessarily occupy portions of a device area.