The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Jun. 14, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Seryeun Yang, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A semiconductor memory device may include a substrate including an active pattern, the active pattern including first and second source/drain regions spaced apart from each other, a bit line that is electrically connected to the first source/drain region and crosses the active pattern, a storage node contact electrically connected to the second source/drain region, a spacer structure between the bit line and the storage node contact, a landing pad electrically connected to the storage node contact, an insulating pattern on the spacer structure and adjacent to the landing pad, and a liner between the insulating pattern and the landing pad. The insulating pattern may include an upper insulating portion and a lower insulating portion between the upper insulating portion and the spacer structure. The largest width of the lower insulating portion may be larger than the smallest width of the upper insulating portion.