The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Feb. 02, 2023
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Yong Jae Lee, Suwon-si, KR;
Seul Ji Song, Suwon-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10B 63/24 (2023.02); H10B 63/84 (2023.02); H10N 70/841 (2023.02);
Abstract
A semiconductor memory device includes a substrate, a first electrode on the substrate, a second electrode on the first electrode, an OTS film between the first electrode and the second electrode, and an electrode spacer film disposed on a part of a side wall of the OTS film, wherein the OTS film includes a first surface that is in contact with the first electrode, a second surface that is in contact with the second electrode, and a third surface that is in contact with the electrode spacer film, and a logical state of data stored in the OTS film is based on polarity of a program voltage.